| 摘要 |
FIELD: physics, semiconductors. ^ SUBSTANCE: invention relates to semiconductor devices sensitive to infrared radiation, and can be used in optical-electronic apparatus for various purposes, especially for wide-field heat direction finding or thermal imaging devices working in two spectral regions. The photodetector consists of n modules, where nëÑ3. Each module has a photosensitive element on the substrate of which there is a multi-element photosensitive line. Since the photosensitive elements are made in form of a trapezium, the modules can be joined such that, the photosensitive structure consisting of n photosensitive cells has the shape of a regular polygon whose side are formed by the photosensitive lines. ^ EFFECT: invention enables design of large-format multiple-module photosensitive structures of different configurations. ^ 4 dwg |
