| 摘要 |
FIELD: physics, semiconductors. ^ SUBSTANCE: invention relates to a device with an abrupt metal-insulator junction with parallel conducting layers. The device with an abrupt metal-insulator junction has at least one conducting layer whose thickness enables transformation of the entire region of the conducting layer into a metal layer as a result of the metal-insulator junction, a first electrode in a certain region of the substrate and a second electrode lying at a given distance from the first electrode, where the conducting layer connects the first and the second electrode. Current flows uniformly to the entire region of the conducting layer. ^ EFFECT: damage to the conducting layer usually caused by current flowing through that conducting layer is less probable owing to the configuration of the device. ^ 16 cl, 10 dwg |
