| 摘要 |
PURPOSE: A semiconductor device and a method for manufacturing the same are provided to minimize the size of the device by vertically forming a drain and a gate on a trench. CONSTITUTION: A first trench is formed on a semiconductor substrate(100). First ion implantation layers(120a,120b) are formed on the surface of the semiconductor substrate and the bottom side of the first trench. A second gate(125b) is formed from the bottom side of both the sidewalls of the first trench to the middle part of the trench. A second trench which passes through the middle part of the first ion implantation layer on the bottom side of the first trench is formed. A drift region(130) is formed on the second trench. A second ion implantation layer(140) is formed on the inner surface of the second trench.
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