| 摘要 |
<p>A bonding apparatus (10) is provided with a chamber (12) whose inside is kept under inert gas atmosphere; a first plasma torch (20) which is attached to the chamber (12) for performing surface treatment to a pad and an electrode by applying a gas brought into the plasma state to a substrate (41) and a semiconductor chip (42) placed inside the chamber (12); a second plasma torch (30), which is attached to the chamber (12) for performing surface treatment to an initial ball (19) or a wire (18) by applying the gas brought into the plasma state to the initial ball (19) or the wire (18) at the leading end of a capillary (17) positioned in the chamber (12); and a bonding processing section (100) for bonding the surface-treated initial ball (19) and the wire (18) to the surface-treated pad and electrode in the chamber (12). Thus, cleaning of the surfaces of the electrode, the pad and the wire can be effectively performed.</p> |
