发明名称 |
THIN FILM MANUFACTURING APPARATUS AND THIN FILM DEPOSITION METHOD USING THE SAME |
摘要 |
PURPOSE: A thin film manufacturing apparatus and a method for depositing a thin film using the same are provided to reduce a time for depositing an atomic layer by simultaneously supplying source gas, purge gas and reaction gas into a chamber. CONSTITUTION: A substrate support unit(20) is installed in a reaction chamber(10). A gas spraying unit(100) includes a plurality of spray units which spray on each substrate. At least one spay unit sprays a plasmalyzed reaction gas. A housing(40) includes a plurality of gas supply holes. A driving shaft(50) rotates in the housing. A sealing unit shields a space between the housing the driving shaft.
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申请公布号 |
KR20100067081(A) |
申请公布日期 |
2010.06.18 |
申请号 |
KR20100051660 |
申请日期 |
2010.06.01 |
申请人 |
JUSUNG ENGINEERING CO., LTD. |
发明人 |
KIM, JAE HO |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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