发明名称 THIN FILM MANUFACTURING APPARATUS AND THIN FILM DEPOSITION METHOD USING THE SAME
摘要 PURPOSE: A thin film manufacturing apparatus and a method for depositing a thin film using the same are provided to reduce a time for depositing an atomic layer by simultaneously supplying source gas, purge gas and reaction gas into a chamber. CONSTITUTION: A substrate support unit(20) is installed in a reaction chamber(10). A gas spraying unit(100) includes a plurality of spray units which spray on each substrate. At least one spay unit sprays a plasmalyzed reaction gas. A housing(40) includes a plurality of gas supply holes. A driving shaft(50) rotates in the housing. A sealing unit shields a space between the housing the driving shaft.
申请公布号 KR20100067081(A) 申请公布日期 2010.06.18
申请号 KR20100051660 申请日期 2010.06.01
申请人 JUSUNG ENGINEERING CO., LTD. 发明人 KIM, JAE HO
分类号 H01L21/20 主分类号 H01L21/20
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