SEMICONDUCTOR DEVICE OF STACK STRUCTURE OF CAPACITOR AND DIODE AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE OF STACK STRUCTURE OF CAPACITOR AND DIODE

摘要

PURPOSE: A semiconductor device in a stacked structure of a capacitor and a diode and a method for manufacturing method for the same are reduce a manufacturing cost by simplifying manufacturing processes of a circuit device. CONSTITUTION: A well region(115) is formed on the upper side of a semiconductor substrate(100). A trench is formed on the well region. A second oxide layer(120) is formed in the trench. An element isolation layer(130) is formed on the bottom side of the trench. A poly-spacer(135) is formed on both sidewall of the trench. A third oxide layer(140) is formed on the exposed surface of the poly-spacer. A second nitride layer(150) is formed in the trench.