| 摘要 |
PURPOSE: A remote plasma system and a plasma processing apparatus including the same are provided to reduce a total size of the apparatus by omitting an additional high frequency generator which is applicable for the remote plasma system. CONSTITUTION: A processing chamber(210) includes an electrode unit(214) which is necessary to generate plasma-discharge for a film deposition process. A remote plasma unit(100) supplies remote plasma source into the processing chamber by generating the remote plasma source. A shared high-frequency generator(300) applies high frequency power with a first frequency to the electrode unit of the processing chamber. During a cleaning process, the shared high frequency generator applies the high frequency power with the first frequency to the remote plasma unit. |
