| 摘要 |
The glass substrate (10) comprises a transparent coating (11) to form an electrode. The transparent coating is a doped transparent metal oxide having a refractive index of 2-3 at a wavelength of maximum efficiency of an absorber, which is intended to be associated with the substrate and dopant elements, and is designed to be resistant to 15 omega . The transparent coating: is electrically conductive after undergoing a heat treatment at 400-700[deg] C; has a thickness of 500-2500 nm; and is associated to texturized layer such as doped or non-doped tin-zinc oxide with protrusions. The glass substrate (10) comprises a transparent coating (11) to form an electrode. The transparent coating is a doped transparent metal oxide having a refractive index of 2-3 at a wavelength of maximum efficiency of an absorber, which is intended to be associated with the substrate and dopant elements, and is designed to be resistant to 15 omega . The transparent coating: is electrically conductive after undergoing a heat treatment at 400-700[deg] C; has a thickness of 500-2500 nm; and is associated to texturized layer such as doped or non-doped tin-zinc oxide with protrusions disposed opposite to the substrate. The layer is texturized on single side or two opposite sides. A thin layer made of semiconductor material is present at opposite sides of the substrate and on the transparent coating. The semiconductor material is made of amorphous silicon, hydrogenated silicon carbide, silicon-germanium, microcrystalline silicon, or an assembly of thin layers including amorphous silicon or crystalline silicon and cadmium telluride. |
