| 摘要 |
<p>PURPOSE: A phase change memory device and a manufacturing method thereof are provided to increase the driving current of a diode by increasing the central part area of ac active region on the diode. CONSTITUTION: An element isolation film(205) which defines a line type active region(A/R) is formed on a semiconductor substrate(200). The central part width of the active region is wider than other part width. An n-type dopant region(210) is formed on the surface of the active region. A diode(220) is arranged on the active region. A phase change film(240) is formed on the diode.</p> |
