| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid-state imaging device which prevents charges stored in a photoelectric converting part from excessively overflowing from a drain terminal of an overflow drain transistor. <P>SOLUTION: The solid-state imaging device has: a photoelectric converting part (101); a transfer transistor (102); an output transistor (104); a reset transistor (103); and an overflow drain transistor (106) which has a source terminal connected to the photoelectric converting part, and discharges the charges stored in the photoelectric converting part. A plurality of pixels are arrayed in rows and columns. The drain terminal of the overflow drain transistor in a row other than a final selection row is configured of the same active area with at least one drain terminal of the drain terminal of the output transistor in a row to be selected next and the drain terminal of the reset transistor in the row to be selected next. <P>COPYRIGHT: (C)2010,JPO&INPIT |
