| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable, and a method of manufacturing a semiconductor device in which a highly reliable semiconductor device can be manufactured at low cost with high productivity. <P>SOLUTION: In the semiconductor device including the thin film transistor, a semiconductor layer of the thin film transistor is formed with an oxide semiconductor layer to which a metal element is added. As the metal element, at least one of metal elements of iron, nickel, cobalt, copper, gold, molybdenum, tungsten, niobium, and tantalum is used. In addition, the oxide semiconductor layer contains indium, gallium, and zinc. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
