| 摘要 |
Methods for operating a nonvolatile memory device including multi-level cells configured to store at least n logic states, where n is equal to or greater than four are provided. The methods may include selecting at least one read voltage for a read operation based on information set at a portion of an address of the respective one of the multi-level cells, and determining multi-level data stored in the respective multi-level cell using the at least one selected read voltage.
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