| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To prevent mixing of a plurality of reactant gases on a substrate and to perform a proper processing for placing the substrate on a rotation table, sequentially supplying a plurality of reactant gases which mutually react with the surface of the substrate, laminating a plurality of layers of a reaction product and forming a thin film. <P>SOLUTION: In the film forming device, the reactant gases of two types are sequentially supplied to the surface of the substrate, and a film is formed. A heater 23 is arranged below the rotation table 7, having an installation region of the substrate, and an external wall member 21 is disposed so as to surround an external side in a radial direction of the rotation table 7, in a region where the heater 23 is installed. A member forming a first narrow space with the rotation table 7 is arranged, and purge gas is made to flow to the first narrow space; and as a result, infiltration of reactant gas to a lower side of the rotation table 7 is prevented. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
