| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a triple type photoelectric conversion device with an appropriate film thickness constitution for obtaining high conversion efficiency. <P>SOLUTION: The photoelectric conversion device 100 includes a transparent electrode layer 2, a photoelectric conversion layer 3 composed of three laminated battery layers 91, 92 and 93 having pin conjunction, and a back surface electrode layer 4 on a substrate 1. The battery layer 91 in an incident portion at the light incident side has a non-crystalline silicon i-layer having a thickness of 100 nm or larger and 200 nm or smaller. The battery layer 93 at a bottom at a side opposite to the light incident side has a crystalline silicon germanium i-layer having a thickness of 700 nm or larger and 1,600 nm or smaller with a ratio of germanium atoms to the sum of germanium atoms and silicon atoms in the crystalline silicon germanium i-layer being 15 atom% or higher and 25 atom% or lower. The battery layer 92 in an intermediate portion between the battery layer 91 in the incident portion and the battery layer 93 at the bottom has a crystalline silicon i-layer having a thickness of 1,000 nm or larger and 2,000 nm or smaller. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
