| 摘要 |
<P>PROBLEM TO BE SOLVED: To form on a GaN substrate, a Group III nitride semiconductor layer with excellent flatness and crystallinity, and to obtain a vertical FFP shape close to a Gaussian shape. Ž<P>SOLUTION: The nitride semiconductor laser device has a laminated layer structure 120 including an n-type GaN substrate 101, an n-type cladding layer 102 of a material of Al<SB>x</SB>Ga<SB>1-x</SB>N (x: 0<x<1) formed on the major surface of the substrate 101 in contacted with the major surface, an MQW active layer 104 formed on the n-type cladding layer 102, and a p-type cladding layer 107 formed on the MQW active layer 104. The major surface of the substrate 101 is tilted in an angle range of 0.35 degrees or more and 0.7 degrees or less with respect to a surface orientation (0001). Al composition x in Al<SB>x</SB>Ga<SB>1-x</SB>N of the n-type cladding layer 102 is 0.025 or more and 0.04 or less. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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