| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a lateral MOS transistor in which the on-resistance is reduced. Ž<P>SOLUTION: The lateral MOS transistor includes a first conductivity-type semiconductor layer; a first oxide film formed in depth direction of the first region of the semiconductor layer; a second oxide film formed in depth direction of the second region separated from the first region of the semiconductor layer; a gate electrode formed in depth direction in the region adjoining the first oxide film in the semiconductor layer; a control electrode formed in the region adjoining the second oxide film in the semiconductor layer; a second conductivity-type region formed in the region near the first oxide film in the surface part of the region sandwiched between the first oxide film and the second oxide film of the semiconductor layer; a first conductivity-type region formed in the region near the first oxide film in the surface part of the second conductivity-type region; a source electrode formed on the first conductivity-type region and the second conductivity-type region; a first conductivity-type region formed in the region near the second oxide film in the surface part of the region sandwiched between the first oxide film and the second oxide film of the semiconductor layer; and a drain electrode formed on the first conductivity-type region. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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