发明名称 Contact structure of semiconductor and manufacturing method thereof
摘要 <p>A contact structure of a semiconductor includes a substrate, a conductive doping layer having an opposite polarity to that of the substrate, the conductive doping layer being formed in the substrate, a conductive layer formed on the conductive doping layer, and an insulation doping layer formed under the conductive doping layer in the substrate.</p>
申请公布号 KR100964400(B1) 申请公布日期 2010.06.17
申请号 KR20030068332 申请日期 2003.10.01
申请人 发明人
分类号 H01L21/283;H01L29/41;H01L21/20;H01L21/265;H01L21/28;H01L21/285;H01L21/316;H01L21/318;H01L21/768;H01L21/82;H01L21/8238;H01L23/48;H01L23/52;H01L27/04;H01L29/08;H01L29/78 主分类号 H01L21/283
代理机构 代理人
主权项
地址