| 摘要 |
PROBLEM TO BE SOLVED: To suppress a local temperature rise in a switching element region of a semiconductor device provided with a vertical switching element group in a semiconductor substrate. SOLUTION: The semiconductor device 100 has the switching element region 50, wherein the vertical switching element group is provided, in its semiconductor substrate. The switching element region 50 includes a first region 51 and a second region 52. In the first region 51, first switching element groups of bipolar structure are provided. In the second region 52, a second switching element group of unipolar structure is provided. The second switching element group is provided between the first switching element groups. COPYRIGHT: (C)2010,JPO&INPIT |
