| 摘要 |
PROBLEM TO BE SOLVED: To provide a memory array which can simplify processes, and in which a logic circuit is sufficiently fast and a holding time of information stored in a memory transistor is sufficiently long. SOLUTION: The memory array includes: a silicon wafer 201, a laterally defined first layer sequence 212 on a first surface region 201a of the silicon wafer 201; a laterally defined second layer sequence 213 on a second surface region 201b of the silicon wafer 201; first silicon dioxide sidewall layers 215 of first width d1 along sidewalls of the first and the second layer sequences 212 and 213; and second silicon dioxide sidewall layers 217 of second width d2 along the first silicon dioxide sidewall layer 215 of the laterally defined second layer sequence 213. COPYRIGHT: (C)2010,JPO&INPIT
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