| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing an FET capable of attaining high positioning precision and a high degree of integration. Ž<P>SOLUTION: The method of manufacturing the FET includes: forming a first n-type semiconductor layer 21 on the surface of a p-type semiconductor substrate 10 and then forming a first p-type semiconductor layer 31 thereupon by an epitaxial growing method; implanting ions of a p-type impurity in a portion of the first n-type semiconductor layer 21 to form a second p-type semiconductor layer 32; implanting ions of an n-type impurity in a portion of the first p-type semiconductor layer 31 to obtain an N-type well 61 comprising the first n-type semiconductor layer 21 and a second n-type semiconductor layer 22; and then forming an N channel type FET at a P-type well 62 comprising the region of the first p-type semiconductor layer 31 enclosed with the N-type well 61. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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