SEMICONDUCTOR LASER DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

A semiconductor laser device is provided with a semiconductor layer laminated body (20) which is selectively grown on a substrate except on a prescribed region of the substrate.  The semiconductor layer laminated body (20) includes an active layer (14) and has a stripe-like optical waveguide extending in the direction which intersects with a front end surface (20A) from which light is outputted.  The active layer (14) has an abnormally grown section (14a) formed on the peripheral section of a prescribed region and a forbidden band width increased section (14b), which is formed on the circumference of the abnormally grown section (14a) and has a larger forbidden band width compared with other portions of the active layer (14), excluding the abnormally grown section (14a).  The optical waveguide is formed by being spaced apart from the abnormally grown section (14a) so as to include the forbidden band width increased section (14b) on the front end surface (20A).