发明名称 SUBSTRATE FOR EUV MASK BLANKS
摘要 <P>PROBLEM TO BE SOLVED: To provide a substrate which has an excellent flatness suitable for an EUV (Extreme UltraViolet) mask or an EUV mask blanks. <P>SOLUTION: A substrate 11 for an EUV mask is made of a material of silica glass containing 1-12 wt.% of TiO<SB>2</SB>, and has a surface roughness (rms) of 2 nm or below in a surface quality region. The substrate has a maximum stress variation (PV) of 0.2 MPa or below in a the surface quality region and has a thermal expansion coefficient of 200 ppb/&deg;C in a temperature range of 0-100&deg;C. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010135732(A) 申请公布日期 2010.06.17
申请号 JP20090139218 申请日期 2009.06.10
申请人 ASAHI GLASS CO LTD 发明人 KOIKE AKIO;EBIHARA TAKESHI
分类号 H01L21/027;G03F1/22;G03F1/24;G03F1/60 主分类号 H01L21/027
代理机构 代理人
主权项
地址