发明名称 PLASMA PROCESSING APPARATUS AND SEMICONDUCTOR DEVICE MANUFACTURED BY THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus having a plurality of discharge spaces in a single chamber, while allowing electric power to be equally applied into respective electrodes. <P>SOLUTION: The plasma processing apparatus has a hermetically sealable chamber 3 that serves as a reaction vessel. The chamber 3 has, in the center of the interior, one anode electrode 4 arranged substantially perpendicularly to the bottom of the chamber 3. On both right and left sides of the anode electrode 4, there are arranged processing objects, glass boards 1, 1. Electric power is supplied to cathode electrodes 2, 2 by one plasma excitation source 8. Between the source 8 and the chamber 3, there is arranged one matching box 7 to match impedances of the cathode and anode electrodes 2, 4 and the source 8 with each other. The power supply 8 is connected to the matching box 7 by one power lead-in line 10. The power lead-in line 10 branches off into two lines from the matching box 7 to the cathode electrode 2, extending symmetrically from a branched portion. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010135835(A) 申请公布日期 2010.06.17
申请号 JP20100032676 申请日期 2010.02.17
申请人 SHARP CORP 发明人 KISHIMOTO KATSUSHI;FUKUOKA YUSUKE
分类号 H01L21/205;C23C16/505;H05H1/46 主分类号 H01L21/205
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