| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a wafer processing method capable of grinding a wafer without damaging the wafer even if a grinding feed rate is set at a high speed rate. <P>SOLUTION: The wafer processing method to form the wafer to a predetermined thickness comprises: a decomposition layer formation process to form a decomposition layer on the whole surface by irradiating the converging point with a laser beam of a wavelength having transparency to a wafer, and by positioning it from the processing surface side of the wafer to the inside while leaving at least a prescribed finishing thickness on the opposite side surface to the surface of the wafer to be processed to the inside; and a grinding process to grind a decomposition layer formed on the wafer to the prescribed finishing thickness by grinding and feeding it to touch a grinding stone to the processing surface of the wafer for which the decomposition layer formation process has been completed. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
