| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which has a small leak current in a current preventing region, and can carry out the high output operation and high temperature operation. Ž<P>SOLUTION: This semiconductor device has: a mesa stripe having a double hetero structure including an active layer pinched between an n type clad layer and a p type clad layer; and the current preventing region composed of a pn junction configured of one material on a mesa stripe side part of the double hetero structure, on an n type substrate. In the semiconductor device, a distance t separated between an aperture end of an n type current preventing region configuring the current preventing region and the p type clad layer configuring the mesa stripe is 20 to 40 nm, and a ratio (h<SB>1</SB>/h<SB>2</SB>) of a distance h<SB>1</SB>from the center in a vertical direction of the active layer to an upper end of the n type current preventing region to a distance h<SB>2</SB>from the center in a vertical direction of the active layer to an upper end of the p type clad layer configuring the mesa stripe is equal to or more than 0.94 and less than 1. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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