发明名称 SEMICONDUCTOR PRESSURE SENSOR, AND METHOD FOR MANUFACTURING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To lower the height of a semiconductor pressure sensor by forming the semiconductor pressure sensor on a single semiconductor substrate. Ž<P>SOLUTION: This pressure sensor includes: a chamber part 105 formed hollowly by removing by etching selectively a semiconductor substrate 101 through an etching opening part 205 formed on the semiconductor substrate 101: a diaphragm part 107 formed over the chamber part 105, for receiving and detecting a pressure; and a sealing part 106 for sealing the chamber part by blocking the etching opening part 205. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2010133755(A) 申请公布日期 2010.06.17
申请号 JP20080308223 申请日期 2008.12.03
申请人 PANASONIC ELECTRIC WORKS CO LTD 发明人 KATO FUMIHITO;SUNADA TAKUYA;NIIMURA YUICHI;MUGIUDA SACHIKO
分类号 G01L9/00;H01L29/84 主分类号 G01L9/00
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