发明名称 |
SEMICONDUCTOR PRESSURE SENSOR, AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
<P>PROBLEM TO BE SOLVED: To lower the height of a semiconductor pressure sensor by forming the semiconductor pressure sensor on a single semiconductor substrate. Ž<P>SOLUTION: This pressure sensor includes: a chamber part 105 formed hollowly by removing by etching selectively a semiconductor substrate 101 through an etching opening part 205 formed on the semiconductor substrate 101: a diaphragm part 107 formed over the chamber part 105, for receiving and detecting a pressure; and a sealing part 106 for sealing the chamber part by blocking the etching opening part 205. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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申请公布号 |
JP2010133755(A) |
申请公布日期 |
2010.06.17 |
申请号 |
JP20080308223 |
申请日期 |
2008.12.03 |
申请人 |
PANASONIC ELECTRIC WORKS CO LTD |
发明人 |
KATO FUMIHITO;SUNADA TAKUYA;NIIMURA YUICHI;MUGIUDA SACHIKO |
分类号 |
G01L9/00;H01L29/84 |
主分类号 |
G01L9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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