| 摘要 |
A disclosed memory circuit includes first and second latch circuits, each writing a write data at a timing of a clock signal and retaining the write data, the write data having been input in each of the first and second latch circuits, a data input circuit supplying the write data to each of the first and second latch circuits when a write enable signal indicates a state allowing the write data to be written, a write back circuit supplying the write data retained in the second latch circuit to the first latch circuit when the write enable signal indicates a state preventing the write data from being written, wherein a robustness against noise in the second latch circuit is more improved than that in the first latch circuit.
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