| 发明名称 |
LIMITER AND SEMICONDUCTOR DEVICE USING THE SAME |
| 摘要 |
The limiter of the invention uses as a diode a stacked gate thin film transistor (TFT) including a floating gate. When the TFT including a floating gate is used, the threshold voltage Vth may be corrected by controlling the amount of charge accumulated in the floating gate even in the case where there are variations in the threshold voltages Vth of the TFT.
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| 申请公布号 |
US2010148845(A1) |
申请公布日期 |
2010.06.17 |
| 申请号 |
US20100713723 |
申请日期 |
2010.02.26 |
| 申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
KATO KIYOSHI |
| 分类号 |
H03L5/00;G06K19/07;G06K19/077;H01L21/77;H01L21/822;H01L21/84;H01L27/04;H01L27/12;H01L27/13;H01L29/786 |
主分类号 |
H03L5/00 |
| 代理机构 |
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