JFET DEVICE STRUCTURES AND METHODS FOR FABRICATING THE SAME

摘要

In accordance with the present techniques, there is provided a JFET device structures and methods for fabricating the same. Specifically, there is provided a transistor (80) including a semiconductor substrate having a source (84) and a drain (86). The transistor (80) also includes a doped channel (88) formed in the semiconductor substrate between the source (84) and the drain (86), the channel (88) configured to pass current between the source (84) and the drain (86). Additionally, the transistor (80) has a gate (90) comprising a semiconductor material formed over the channel (88) and dielectric spacers (92) on each side of the gate (90). The source (84) and the drain (86) are spatially separated from the gate (90) so that the gate (90) is not over the drain (86) and source (84).