摘要 |
<p>A memristive routing device (200) includes a memristive matrix (240), mobile dopants (255) moving with the memristive matrix (240) in response to programming electrical fields and remaining stable within the memristive matrix (240) in the absence of the programming electrical fields; and at least three electrodes (210, 220, 230) surrounding the memristive matrix (240). A method for tuning electrical circuits with a memristive device (900) includes measuring a circuit characteristic (805) and applying a programming voltage to the memristive device (900) which causes motion of dopants within the memristive device (900) to alter the circuit characteristic (805). A method for increasing a switching speed of a memristive device (1300) includes drawing dopants from two geometrically separated locations into close proximity to form two conductive regions (1380, 1390) and then switching the memristive device (1300) to a conductive state by applying a programming voltage which rapidly merges the two conductive regions (1380, 1390) to form a conductive pathway between a source electrode (1310) and a drain electrode (1320).</p> |
申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.;WU, WEI;STRACHAN, JOHN PAUL;WILLIAMS, R. STANLEY;FIORENTINO, MARCO;WANG, SHIH-YUAN;QUITORIANO, NATHANIEL J.;CHO, HANS S.;BORGHETTI, JULIEN;MATHAI, SAGI VARGHESE |
发明人 |
WU, WEI;STRACHAN, JOHN PAUL;WILLIAMS, R. STANLEY;FIORENTINO, MARCO;WANG, SHIH-YUAN;QUITORIANO, NATHANIEL J.;CHO, HANS S.;BORGHETTI, JULIEN;MATHAI, SAGI VARGHESE |