| 摘要 |
<p>PURPOSE: A semiconductor device and a method for manufacturing the same are provided to improve the mobility on a channel surface by using a grown silicon for the channel. CONSTITUTION: In a semiconductor device and a method for manufacturing the same, an element isolation film and a source/drain region are formed on a substrate. A gate structure is formed on the substrate. A spacer is formed on both sides of the gate structure. A silicon epitaxial layer(210) is formed on the substrate. A gate oxidation film(220) is formed on the silicon epitaxial layer. The gate electrode(230) is formed on the gate oxidation film.</p> |
