发明名称 LOW-PERMITTIVITY CERAMIC DIELECTRIC COMPOSITION FOR LOW-TEMPERATURE BURNING, AND LOW-PERMITTIVITY CERAMIC DIELECTRIC BODY
摘要 <P>PROBLEM TO BE SOLVED: To provide a low-permittivity ceramic dielectric composition for low-temperature burning which can be burned at low temperature such as 800 to 950&deg;C and has low permittivity of 4.5-6.0 (1 MHz) and a low dielectric loss factor, and to provide a low-permittivity ceramic dielectric produced by burning the composition at a low temperature. <P>SOLUTION: The low-permittivity ceramic dielectric composition for low-temperature burning is characterized by including: 44-65 wt.% borosilicate glass frit containing SiO<SB>2</SB>, B<SB>2</SB>O<SB>3</SB>, Al<SB>2</SB>O<SB>3</SB>, alkaline earth oxides and alkali metal oxides; 34-55 wt.% filler; and 0.1-5 wt.% at least one nucleating agent selected from the group consisting of ZrO<SB>2</SB>, TiO<SB>2</SB>, La<SB>2</SB>O<SB>3</SB>and WO<SB>3</SB>. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010132540(A) 申请公布日期 2010.06.17
申请号 JP20090250679 申请日期 2009.10.30
申请人 KOREA INST OF SCIENCE & TECHNOLOGY 发明人 PARK SEIKEN;PARK JAE GWAN;LEE HANG WON;KIN TOKAN;CHOI KYOUNG JIN
分类号 C04B35/16;C04B35/18;H01B3/02;H05K1/03 主分类号 C04B35/16
代理机构 代理人
主权项
地址