| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element capable of increasing luminous efficiency, to provide a method of manufacturing the same, and to provide a light-emitting device. <P>SOLUTION: The semiconductor light-emitting element 1 of the light-emitting device includes an LED thin film part 2 having an n-type GaN layer 22 and a p-type GaN layer 24, and a six-sided pyramid shaped n-type ZnO substrate (a conductive ZnO substrate) 3 which is directly bonded to one surface side in a thickness direction of the LED thin film part 2. A cathode electrode 4 is formed in ohmic contact with the n-type GaN layer 22 on a flat part 22a situated on the front surface side of the n-type GaN layer 22 opposite to the side on which the p-type GaN layer 24 is formed. An anode electrode 5 is formed in ohmic contact with the n-type ZnO substrate 3 on the side of a lower surface 31 of the n-type ZnO substrate 3. A finely rugged structure 22 for changing a traveling direction of a light emitted toward the front surface side of the n-type GaN layer 22 in lights generated from the LED thin film part 2 is formed in an area on the front surface of the n-type GaN layer 22 in which the cathode electrode 4 is not formed. <P>COPYRIGHT: (C)2010,JPO&INPIT |
