发明名称 METHOD FOR MANUFACTURING INFRARED SENSOR, INFRARED SENSOR AND QUANTUM-TYPE INFRARED GAS CONCENTRATION METER
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing an infrared sensor having a small simple sensor shape and capable of stable measurement against disturbances or variations in a measured gas such as flow rate variations and temperature variations, and to provide an infrared sensor. <P>SOLUTION: The method for manufacturing the infrared sensor includes: a first dicing step of forming a plurality of sensor elements 13 by cutting a wafer 10; a second dicing step of mounting the sensor elements 13 cut out in the first dicing step on a lead flame 14, and cutting the sensor elements 13 molded together with a wire 16 with a resin, and the lead flame 14 into pieces; and a filtering step of forming an optical filter 12 on a light receiving surface 13a of the sensor elements 13, the filtering step being performed before the first dicing step. By the method, the optical filter 12 is directly and integrally formed on the light receiving surface 13a of the sensor elements 13. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2010133946(A) 申请公布日期 2010.06.17
申请号 JP20090252230 申请日期 2009.11.02
申请人 ASAHI KASEI ELECTRONICS CO LTD 发明人 TOKUO SEIICHI
分类号 G01J1/02;G01J1/04;G01N21/35;G01N21/3504;G01N21/61 主分类号 G01J1/02
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