<p>PURPOSE: A nano-imprint lithography process is provided to remove an error of patterns on a substrate by using a mod having smaller size than a substrate area. CONSTITUTION: In a nano-imprint lithography process, after forming a first resin pattern, resin coated on a part of multiple area on an etch layer is etched by using the first resin pattern as a mask(110). After forming a second resin pattern, resin coated on the other part of multiple area on an etch layer is etched by using the second resin pattern as a mask(120).</p>
申请公布号
KR20100065819(A)
申请公布日期
2010.06.17
申请号
KR20080124379
申请日期
2008.12.09
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
CHO, YOUNG TAE;LEE, SUK WON;KWON, SIN;SEO, JUNG WOO;KIM, JEONG GIL