发明名称 NANO-IMPRINT LITHOGRAPHY PROCESS
摘要 <p>PURPOSE: A nano-imprint lithography process is provided to remove an error of patterns on a substrate by using a mod having smaller size than a substrate area. CONSTITUTION: In a nano-imprint lithography process, after forming a first resin pattern, resin coated on a part of multiple area on an etch layer is etched by using the first resin pattern as a mask(110). After forming a second resin pattern, resin coated on the other part of multiple area on an etch layer is etched by using the second resin pattern as a mask(120).</p>
申请公布号 KR20100065819(A) 申请公布日期 2010.06.17
申请号 KR20080124379 申请日期 2008.12.09
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHO, YOUNG TAE;LEE, SUK WON;KWON, SIN;SEO, JUNG WOO;KIM, JEONG GIL
分类号 H01L21/027 主分类号 H01L21/027
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