发明名称 |
THIN FILM TRANSISTOR, DISPLAY DEVICE, AND MANUFACTURING METHODS THEREOF |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin film transistor whose electric characteristics can be enhanced in reliability, a display device which can be enhanced in picture quality, and manufacturing methods thereof. <P>SOLUTION: The thin film transistor includes a gate electrode, a gate insulating layer formed on the gate electrode, an interconnect formed on the gate insulating layer, an oxide semiconductor layer overlapping the gate electrode and formed on the gate insulating layer and interconnect, and an organic insulating layer brought into contact with the oxide semiconductor layer. <P>COPYRIGHT: (C)2010,JPO&INPIT |
申请公布号 |
JP2010135778(A) |
申请公布日期 |
2010.06.17 |
申请号 |
JP20090253688 |
申请日期 |
2009.11.05 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
YAMAZAKI SHUNPEI;NODA KOSEI;SASAKI TOSHINARI;OHARA HIROKI;SAKATA JUNICHIRO |
分类号 |
H01L29/786;G02F1/1368;G09F9/30;H01L21/28;H01L21/336;H01L29/417;H01L29/423;H01L29/49 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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