| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor light emitting element which has high light emission output. <P>SOLUTION: The group III nitride semiconductor light emitting element 1 includs: an n-type semiconductor layer 12; an active layer 13 laminated on the n-type semiconductor layer 12 and comprising a multiple quantum well structure; a first p-type semiconductor layer 14 formed by laminating an undoped film 14a having a composition of Al<SB>x</SB>Ga<SB>1-x</SB>N (0<x≤0.4, where (x) represents a composition ratio) and containing no dopant and an undoped film 14a and a doped film 14b having a composition of Al<SB>y</SB>Ga<SB>1-y</SB>N (0≤y<0.4, where (y) represents a composition ratio) and containing a dopant alternately a plurality of times, a surface on the side of the active layer 13 being formed of an undoped film 14a; and a second p-type semiconductor layer 15 laminated on the first n-type semiconductor layer 14. <P>COPYRIGHT: (C)2010,JPO&INPIT |
