发明名称 EXCLUSIVE METERING STAGE OF LITHOGRAPHY EQUIPMENT
摘要 <P>PROBLEM TO BE SOLVED: To provide a system and method used for detecting parameters for exposure portions or exposure beams. <P>SOLUTION: A system 200 comprises a substrate stage 106 and a metering stage 116. The substrate stage 106 positions a substrate 112 to receive exposure beams from an exposure portion of the lithography system 200. A metering system comprises an exposure system or a sensor system for detecting parameters of the exposure beams. For example, the system is within the lithography system, and the lithography system includes a lighting system 212, a patterning device 214, and a photographing system 216. The patterning device 214 forms patterns in radiation beams from the lighting system 212. A projection system 216 disposed in the exposure portion projects patterned beams onto the substrate 112 or the sensor system. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010135817(A) 申请公布日期 2010.06.17
申请号 JP20100006585 申请日期 2010.01.15
申请人 ASML NETHERLANDS BV 发明人 VEN DE KERKHOF MARCUS ADRIANUS;VOS HARALD PETRUS CORNELIS
分类号 H01L21/027;G01J1/02 主分类号 H01L21/027
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