| 摘要 |
<P>PROBLEM TO BE SOLVED: To detect exactly data holding defect of a memory cell accelerating noise caused in operation of SR (self-refresh). Ž<P>SOLUTION: A semiconductor memory device 1 includes a memory cell array H40 having a plurality of memory cells, an SR timer circuit H80 deciding a period of self-refresh of the memory cells, a refresh counter H20 generating an internal address signal being an object of self-refresh, and a circuit outputting a pulse activation signal for executing continuous refresh operation in one period of self-refresh. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
|
