| 摘要 |
PROBLEM TO BE SOLVED: To provide a susceptor capable of suppressing the occurrence of an autodoping phenomenon and securing the reliability of an epitaxial wafer when manufacturing the epitaxial wafer. SOLUTION: On a susceptor 2B, a substrate wafer W is placed when manufacturing an epitaxial wafer EPW. The susceptor 2B has a communication path 20B for communicating with the outside of a susceptor 2 and a space 223 formed between the substrate wafer W and the susceptor 2 when the substrate W is placed. The communication path 20B is formed so that an opening facing the space 223 and an opening facing the outside of the susceptor 2 are prevented from interfering with each other in a flat plane in the thickness direction of the susceptor 2. The side surface of the susceptor 2B is formed in a stepped shape where its cross section is reduced as it goes from an upper side to a lower side, and has a step 26. The communication part 20B is formed at the step 26, and makes the space 223 communicate with the outside of the susceptor 2B. COPYRIGHT: (C)2010,JPO&INPIT
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