| 摘要 |
907,427. Semi-conductor devices. SIEMENSSCHUCKERTWERKE A.G. Dec. 30, 1960 [Dec. 30, 1959], No. 44877/60. Class 37. A semi-conductor device is produced by bonding a molybdenum plate provided with a silver layer and over that a gold layer to a goldcontaining electrode on a silicon body by alloying the two gold layers together. An N-conducting silicon body 2 has gold foils 3, 4, containing boron and antimony respectively, alloyed thereto at 700‹ C. to 800‹ C. A molybdenum carrier plate 5 is prepared by providing it with a layer 6 of an alloy of iron, nickel and cobalt on one face and a gold layer 7 on the opposite face. A silver layer 8 is then galvanically applied to the gold layer, or a silver foil is brazed thereto, and a further gold layer 9, less than <SP>1</SP>/ 10 the thickness of electrode 3, is galvanically applied to the silver layer. Molybdenum plate 5 is then arranged with gold layer 9 adjacent electrode 3 and the assembly is heated to about 400‹ to 500‹ C. to alloy layer 9 with electrode 3. A second similarly prepared molybdenum plate 11 is simultaneously bonded to electrode 4. Plate 5 is soldered through layer 6 to a housing 10 and plate 11 is similarly soldered to a copper cup 13 into which a lead wire 18 is pressed. First gold layer 7 may be replaced by a layer of copper or nickel or it may be omitted. It is stated that the presence of the silver layer prevents the formation of a molybdenum-silicon compound in the alloyed region. |
