| 摘要 |
The present invention relates to a thin film transistor and a method for preparing the same, wherein an electric field is applied to a gate electrode substance so that a polycrystalline silicon layer crystallized by high heat generated by its Joule heating is used to form the semiconductor layer of a thin film transistor, and wherein said gate electrode substance is connected with an amorphous silicon layer via a contact hole contained in said thin film transistor so that arc generation that may occur and crystallization may be prevented without introducing a separate mask intended to remove a certain region of a gate dielectric layer, and the gate dielectric layer on which said contact hole is formed and a gate electrode are used as masks to carry out a doping process for conductive impurity ions in the source/drain region of the semiconductor layer so that a separate mask for doping is not required, which enables reduction of manufacturing cost and streamlining of the process. The present invention relates to a thin film transistor comprising a substrate; a semiconductor layer that is located on said substrate and includes a channel region and a source/drain region including a first region and a second region; a gate dielectric layer that is located on said semiconductor layer; a gate electrode that is located on said gate dielectric layer; an interlayer dielectric layer that is located on said gate electrode; and source and drain electrodes that are located on said interlayer dielectric layer, and are respectively connected with the source and drain regions of said semiconductor layer via a contact hole that exposes a part of the source and drain regions of said semiconductor layer formed in said gate dielectric layer and interlayer dielectric layer, wherein said source and drain regions contain conductive impurity ions, and projection ranges (Rp) of conductive impurity ions contained in said first region and said second region in said source and drain regions are different from each other; and to a method for preparing the same. |
