| 摘要 |
<p>Disclosed are a tantalum nitride film formation method wherein a atom-containing compound gas as a reaction gas and a t-tris (diethylamido) tantalum gas as a starting material gas are supplied onto a substrate (S) and a nitride film is formed on the substrate (S), and a film formation device that is equipped with a reaction gas supply line (L4), a vessel (13) for liquefying a starting material, a vaporizer (11) for gasifying the liquefied starting material, a liquid mass flow controller (12) for adjusting the amount of the starting material liquid to be supplied, and a starting material gas supply line (L1). Using the method and the device, the starting material gas can be supplied stably at all times, the throughput of the substrate to be treated can be improved, nitride film productivity can be improved as a result.</p> |
