| 摘要 |
<p>Disclosed is a semiconductor device with a higher breakdown voltage. The semiconductor device disclosed comprises a semiconductor element area, a peripheral breakdown voltage area, an outer electrode, an insulator, and an intermediate electrode. A semiconductor element is formed in the semiconductor element area. The peripheral breakdown voltage area is formed around the semiconductor element area and formed of a single conductive area. The semiconductor element area and the peripheral breakdown voltage area are exposed on one of the surfaces of a semiconductor substrate. The outer electrode is formed along the periphery of the semiconductor substrate on the surface of the peripheral breakdown voltage area. The outer electrode is conducted with the peripheral breakdown voltage area. The insulator is formed on the surface of the peripheral breakdown voltage area between the outer electrode and the semiconductor element area. The intermediate electrode is formed on the insulator. The thickness of the insulator in the lower portion of the intermediate electrode is thinner on the outer electrode side than the semiconductor element area side.</p> |
