| 摘要 |
PURPOSE: A semiconductor device and a manufacturing method thereof are provided to effectively increase a leakage path by applying RCAT(Recess Channel Array Transistor) technology in the surrounding region. CONSTITUTION: A semiconductor substrate(100) comprises a cell region(C) and a surrounding region(P). A part isolation pattern(108a) is selectively formed on a junction area forming part. An Si layer is formed on an active area of the semiconductor substrate which includes the part isolation pattern. A device isolation layer(108) is formed to limit the active area in the cell area and the surrounding area. A gate is formed on a gate forming area of the semiconductor substrate.
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