| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress occurrence of uneven distortion in a nitride-based semiconductor light emitting element formed by growing crystals by an ELO (Epitaxial Lateral Overgrowth) method. <P>SOLUTION: The nitride-based semiconductor light emitting element has a nitride-based semiconductor laminate structure 50. The nitride semiconductor laminate structure 50 includes: an active layer 32 including an Al<SB>a</SB>In<SB>b</SB>Ga<SB>c</SB>N crystal layer (a+b+c=1, a≥0, b≥0, c≥0); an Al<SB>d</SB>Ga<SB>e</SB>N overflow suppression layer 36 (d+e=1, d>0, e≥0); and an Al<SB>f</SB>Ga<SB>g</SB>N layer 38 (f+g=1, f≥0, g≥0, f<d). The Al<SB>d</SB>Ga<SB>e</SB>N overflow suppression layer 36 is arranged between the active layer 32 and the Al<SB>f</SB>Ga<SB>g</SB>N layer 38, and the Al<SB>d</SB>Ga<SB>e</SB>N overflow suppression layer 36 includes a layer 35 containing In with a concentration of 1×10<SP>16</SP>atms/cm<SP>3</SP>or more but not more than 1×10<SP>19</SP>atms/cm<SP>3</SP>, wherein the thickness of the layer 35 containing In is half the thickness of the Al<SB>d</SB>Ga<SB>e</SB>N overflow suppression layer 36 or thinner. <P>COPYRIGHT: (C)2010,JPO&INPIT |
