MICROWAVE PLASMA SOURCE AND METHOD FOR FORMING A LINEARLY EXTENDED PLASMA UNDER ATMOSPHERIC PRESSURE CONDITIONS

摘要

The invention relates to a microwave plasma source and to a method for forming a linearly extended plasma under atmospheric pressure conditions. The aim of the invention is to provide a possibility for a large-scale modification of substrate surfaces using a plasma formed under atmospheric pressure conditions, wherein constant conditions can be maintained over the entire surface to be modified. For a microwave plasma source according to the invention, at least one plasma outlet nozzle and at least one inlet for a plasma gas are present at a plasma chamber. At least two units, each having at least one magnetron and a slit antenna, are disposed outside of the plasma chamber at two diametrically opposite sides on a plasma chamber having non-rotationally symmetrical cross sections. The magnetrons can be operated in alternating pulsed mode.