| 摘要 |
A transfer transistor (112) has first, second and third field effect transistors (1121-1123) that are integrally series-connected between a photoelectric conversion element (111) and an amplifier circuit. The first and second field effect transistors are configured such that the gate electrodes of the first and second field effect transistors are collectively driven at the same time. It is further arranged that the threshold voltage of the first field effect transistor be higher than that of the second field effect transistor. As the gate electrodes of the first, second and third field effect transistors are driven in stages, electrons, which are generated by the photoelectric conversion element and transferred through the first field effect transistor, are accumulated in the channel region of the second field effect transistor, and the electrons accumulated in the channel region are transferred to the input of the amplifier circuit via the third field effect transistor. |
