| 摘要 |
<p>Disclosed is a resistance change element which is capable of preventing the interface resistance, for the side for which the resistance is not changed, from becoming high due to the applied voltage. The resistance change element is configured with a resistance change film (265) arranged between a first electrode (280) and a second electrode (250), and is configured such that the oxygen concentration in the resistance change film (265) is high at the side (high-concentration resistance change layer (260)) which interfaces with the second electrode (250) and is low at the side (low-concentration resistance change layer (270)) which interfaces with the first electrode (280). In addition, the junction area of the low-concentration resistance change layer (270) and the first electrode (280) is greater than the junction area of the high-concentration resistance change layer (260) and the second electrode (250).</p> |
