发明名称 CAM CELL MEMORY DEVICE
摘要 PURPOSE: A cam cell memory device is provided to minimize power consumed in a read operation by outputting data easily just with the application of the reference voltage applied to a gate in the read operation. CONSTITUTION: A pull-up unit(212) applies a power supply voltage to an output node according to the state of the threshold voltage of a first nonvolatile memory cell. A pull-down unit(216) grounds the output node according to the state of the threshold voltage of a second nonvolatile memory cell. The pull-up unit and the pull-down unit are connected to the output node. A cam cell(210) comprises the pull-up unit which applies the power supply voltage to the output node according to the state of the threshold voltage of the first nonvolatile memory cell and the pull-down unit which grounds the output node according to the state of the threshold voltage of the second nonvolatile memory cell. An operation selecting unit(230) is connected to the cam cell and supplies the power supply voltage and a grounding voltage in the read operation. A latch unit(220) is connected to the cam cell and the operation selecting unit and stores the data to be recorded in the cam cell.
申请公布号 KR20100065514(A) 申请公布日期 2010.06.17
申请号 KR20080123875 申请日期 2008.12.08
申请人 HYNIX SEMICONDUCTOR INC. 发明人 AHN, SUNG HOON
分类号 G11C15/00;G11C16/34 主分类号 G11C15/00
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